Method of manufacturing nanoimprint stamp

ABSTRACT

Methods of manufacturing a nanoimprint stamp are provided. The method may include forming a pattern on a surface of a master substrate, depositing an etch barrier layer on a surface of a stamp substrate, coating a photoresist on one of the surfaces of the master substrate and the stamp substrate on which an etch barrier layer is formed, forming a photoresist pattern by pressing the master substrate against the stamp substrate, forming a hard mask by etching the etch barrier layer using the photoresist pattern, and etching the stamp substrate using the hard mask as an etch mask.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2010-0128624, filed on Dec. 15, 2010, in the KoreanIntellectual Property Office (KIPO), the disclosure of which isincorporated herein in its entirety by reference.

BACKGROUND

1. Field

Example embodiments relate to methods of manufacturing nanoimprintstamps, and more particularly, to methods of manufacturing nanoimprintstamps using master stamps.

2. Description of the Related Art

A nanoimprint process is a process of repeatedly copying a pattern byprinting the pattern on a surface of an object using a stamp on whichthe pattern is formed.

In the nanoimprint process that uses ultraviolet rays, the stamp isformed of a transparent material so that ultraviolet rays can passtherethrough, and a reverse image of a pattern to be stamped is formedon a surface of the stamp in a protruded structure. After directlypressing a photoresist coated on a substrate with the stamp, thephotoresist is hardened via ultraviolet rays, and afterwards, thepattern on the stamp is transferred onto the photoresist.

Since the stamp must resist to a predetermined pressure and is exposedto a large amount of ultraviolet rays, the stamp is formed of a materialhaving high hardness and small deformation such as quartz or glass.

Conventionally, electron beam lithography is performed to manufacture astamp. A long electron beam recording time is required for forming apattern having a few nm to a few tens of nm on a surface of the stamp.

When electron beam recording is performed on a surface of quartz, apatterning process for recording a pattern having less than 20 nm isdifficult. Also, when manufacturing multiple numbers of stamps havingthe same pattern, it is difficult to obtain stamps having the samepattern due to variations of the electron beam recording conditions andetching conditions.

SUMMARY

Provided are methods of manufacturing nanoimprint stamps by transferringa precise nanopattern from a master substrate to the stamps.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

In accordance with example embodiments, a method of manufacturing ananoimprint stamp may include forming a pattern on a surface of a mastersubstrate, depositing an etch barrier layer on a surface of a stampsubstrate, coating a photoresist on one of the surface of the mastersubstrate and the surface of the stamp substrate, pressing the mastersubstrate against the stamp substrate to compress the photoresist,forming a photoresist pattern on the stamp substrate by hardening thephotoresist, forming a hard mask on the stamp substrate by etching theetch barrier layer using the photoresist pattern, and etching the stampsubstrate using the hard mask as an etch mask.

In accordance with example embodiments, a method of manufacturing ananoimprint stamp may include forming a pattern on a surface of a mastersubstrate, coating a photoresist on one of a surface of a stampsubstrate and the surface of the master substrate, pressing the mastersubstrate against the stamp substrate to compress the photoresist,forming a photoresist pattern on the stamp substrate by hardening thephotoresist, and etching the stamp substrate using the photoresistpattern as an etch mask.

In accordance with example embodiments, a method of manufacturing ananoimprint stamp may include forming a pattern on a surface of a mastersubstrate, coating a first photoresist on one of a surface of a firststamp substrate and the surface of the master substrate, pressing themaster substrate against the first stamp substrate to compress thephotoresist, forming a first photoresist pattern on the first stampsubstrate by hardening the first photoresist, removing the mastersubstrate, coating a second photoresist on one of surfaces of the firstphotoresist pattern and a second stamp substrate, pressing the firststamp substrate against the second stamp substrate to compress thesecond photoresist, forming a second photoresist pattern on the secondstamp substrate by hardening the second photoresist, removing the firststamp substrate, and etching the second stamp substrate using the secondphotoresist pattern as an etch mask.

In accordance with example embodiments, a method of manufacturing ananoimprint stamp may include forming a pattern on a surface of a mastersubstrate, coating a first photoresist on one of the surface of themaster substrate and a surface of a first stamp substrate, pressing themaster substrate against the first stamp substrate to compress the firstphotoresist, forming a first photoresist pattern on the first stampsubstrate by hardening the first photoresist, removing the mastersubstrate, depositing an etch barrier layer on a surface of a secondstamp substrate, coating a second photoresist on one of surfaces of thefirst photoresist pattern and the etch barrier layer, pressing the firststamp substrate against the second stamp substrate to compress thesecond photoresist, forming a second photoresist pattern on the secondstamp substrate by hardening the second photoresist, removing the firststamp substrate, forming a hard mask by etching the etch barrier layerusing the second photoresist pattern, and etching the second stampsubstrate using the hard mask as an etch mask.

According to example embodiments, there is provided a method ofmanufacturing a nanoimprint stamp. In example embodiments, the methodmay include forming a pattern on a surface of a master substrate,depositing an etch barrier layer on a surface of a stamp substrate,coating a photoresist on one of the surfaces of the master substrate andthe stamp substrate, pressing the master substrate against the stampsubstrate, forming a photoresist pattern formed of the photoresist onthe stamp substrate by hardening the photoresist, forming a hard mask byetching the etch barrier layer using the photoresist pattern, andetching the stamp substrate using the hard mask as an etch mask.

The etch barrier layer may be formed of one of a metal film, an oxidefilm, and a nitride film.

The etch barrier layer may be formed of a material selected from thegroup consisting of the metal selected from the group consisting of Cr,Ti, Ta, Pt, Au, and Mo and a metal oxide or a metal nitride that isformed by combining oxygen or nitrogen with the first metal.

The etch barrier layer may be formed to have a thickness in a range fromabout 1 nm to about 20 nm.

The etch barrier layer may be formed of a material selected from thegroup consisting of SiO₂, indium tin oxide (ITO), and Si₃N₄.

The master substrate may be a silicon substrate.

The stamp substrate may be formed of a material selected from the groupconsisting of quartz, glass, and polymer.

The photoresist may be an ultraviolet ray hardening photoresist, and thehardening of the photoresist may include irradiating ultraviolet raysonto the stamp substrate.

According to example embodiments, there is provided a method ofmanufacturing a nanoimprint stamp. In example embodiments the method mayinclude forming a pattern on a surface of a master substrate, coating aphotoresist on one of a surface of a stamp substrate and the surface ofthe master substrate, pressing the master substrate against the stampsubstrate, forming a photoresist pattern formed of the photoresist onthe stamp substrate, by hardening the photoresist, and etching the stampsubstrate using the photoresist pattern as an etch mask.

According to example embodiments, there is provided a method ofmanufacturing a nanoimprint stamp. In example embodiments, the methodmay include forming a pattern on a surface of a master substrate,coating a first photoresist on one of a surface of a first stampsubstrate and the surface of the master substrate, pressing the mastersubstrate against the first stamp substrate, forming a first photoresistpattern formed of the first photoresist on the first stamp substrate byhardening the first photoresist, removing the master substrate, coatinga second photoresist on one of surfaces of the first photoresist patternand a second stamp substrate, pressing the first stamp substrate againstthe second stamp substrate, forming a second photoresist pattern formedof the second photoresist on the second stamp substrate by hardening thesecond photoresist, removing the first stamp substrate, and etching thesecond stamp substrate using the second photoresist pattern as an etchmask.

According to example embodiments, there is provided a method ofmanufacturing a nanoimprint stamp. In example embodiments the method mayinclude forming a pattern on a surface of a master substrate, coating afirst photoresist on one of the surface of the master substrate and asurface of a stamp substrate, pressing the master substrate against thefirst stamp substrate, forming a first photoresist pattern formed of thefirst photoresist on the first stamp substrate by hardening the firstphotoresist, removing the master substrate, depositing an etch barrierlayer on a surface of the second stamp substrate, coating a secondphotoresist on one of surfaces of the first photoresist pattern and thesecond stamp substrate, pressing the first stamp substrate against thesecond stamp substrate, forming a second photoresist pattern formed ofthe second photoresist on the second stamp substrate by hardening thesecond photoresist, removing the first stamp substrate, forming a hardmask by etching the etch barrier layer using the second photoresistpattern, and etching the second stamp substrate using the hard mask asan etch mask.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of example embodiments, takenin conjunction with the accompanying drawings of which:

FIGS. 1A through 1G are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments,

FIGS. 2A through 2E are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments,

FIGS. 3A through 3G are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments, and

FIGS. 4A through 4H are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments.

DETAILED DESCRIPTION

Example embodiments will be described more fully hereinafter withreference to the accompanying drawings, in which example embodiments areshown. The present invention may, however, be embodied in many differentforms and should not be construed as limited to example embodiments asset forth herein. Rather, example embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey thescope of the present invention to those skilled in the art. In thedrawings, the sizes and relative sizes of layers and regions may beexaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers that may be present. In contrast, whenan element is referred to as being “directly on,” “directly connectedto” or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing exampleembodiments only and is not intended to be limiting of the presentinvention. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized example embodiments (and intermediate structures). As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, example embodiments should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe present invention.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Reference will now be made in detail to example embodiments, examples ofwhich are illustrated in the accompanying drawings. However, exampleembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, exampleembodiments are merely described below, by referring to the figures, toexplain aspects of the present description. In the drawings, likereference numerals refer to the like elements throughout, and lengthsand sizes of elements and regions may be exaggerated for clarity andconvenience of explanation.

FIGS. 1A through 1G are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments.

Referring to FIG. 1A, a master substrate 110 may be fabricated byforming a pattern on a substrate, for example, a silicon substrate. Themaster substrate 110 may be formed by a conventional method, forexample, electron-beam lithography, photo lithography, interferencelithography, or self assembly lithography. The pattern may be formed ona first surface 110 a of the master substrate 110.

Referring to FIG. 1B, an etching barrier layer 132 may be formed on astamp substrate 130. The stamp substrate 130 may be a substrate wherethe pattern of the master substrate 110 is transferred thereto. Ananoimprint process may be performed by using the stamp substrate 130.The stamp substrate 130 may be formed of quartz, glass, or a polymerhaving a high hardness. The polymer having the high hardness may be anacrylate group polymer, a urethane group polymer, or a siliconcontaining polymer.

The etching barrier layer 132 may be a metal thin film formed of ametal, for example, chrome Cr, titanium Ti, tantalum Ta, platinum Pt,gold Au, or molybdenum Mo (or an oxide or a nitride of these metals). Inexample embodiments, the metal thin film may be formed to a thickness ina range from about 1 nm to about 20 nm by a conventional depositionmethod. The metal thin film may have an ultraviolet (UV) transmissivitygreater than 20%.

The etch barrier layer 132 may be formed of an oxide or a nitride. Forexample, the etch barrier layer 132 may be formed of chrome oxide,silicon oxide, indium tin oxide (ITO), or silicon nitride. The etchingbarrier layer 132 formed of these oxides or the silicon nitride may beformed to a thickness having an UV transmissivity greater than 50%.

Referring to FIG. 1C, a photoresist 140 that can be hardened byultraviolet rays may be coated on the first surface 110 a of the mastersubstrate 110 on which the pattern is formed using a spin coatingmethod, a dispensing method, or a dipping method. Although FIG. 1Cillustrates the photoresist 140 as being formed on the master substrate110, example embodiments are not limited thereto. For example, thephotoresist 140 may alternatively be formed on the etch barrier 132.

The stamp substrate 130 may then be pressed against the master substrate110. At this point, the etch barrier layer 132 of the stamp substrate130 faces the photoresist 140.

Referring to FIG. 1D, the photoresist 140 may be hardened by irradiatingultraviolet rays UV onto the stamp substrate 130. As a result, thepattern of the master substrate 110 is transferred to the photoresist140 using a nanoimprint process. The photoresist 140 on which thepattern is transferred is referred to as a photoresist pattern 142.

Referring to FIG. 1E, the master substrate 110 may be detached from thestamp substrate.

Referring to FIG. 1F, the etch barrier layer 132 may be etched using thephotoresist pattern 142 as an etch mask, and the etched etch barrierlayer 132 is referred to as a hard mask 134.

Referring to FIG. 1G, the stamp substrate 130 may be etched using thehard mask 134 as an etch mask in a dry or wet etching method. When thehard mask 134 is removed, a stamp 130′ having a pattern on a surfacethereof is manufactured. The pattern of the manufactured stamp 130′ is areverse image of the pattern of the master substrate 110.

FIGS. 2A through 2E are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments.

Referring to FIG. 2A, a master substrate 210 may be fabricated byforming a pattern on a substrate, for example, a silicon substrate. Themaster substrate 210 may be formed by a conventional method, forexample, electron-beam lithography, photo lithography, interferencelithography, or self assembly lithography. The pattern may be formed ona first surface 210 a of the master substrate 210 as shown in FIG. 2A.

Referring to FIG. 2B, a photoresist 220 that can be hardened byultraviolet rays may be coated on the first surface 210 a of the mastersubstrate 210 on which the pattern is formed using a spin coatingmethod, a dispensing method, or a dipping method. The photoresist 220may be formed of a material having an etch-selectivity with a stampsubstrate 230. Although FIG. 2B illustrates the photoresist 220 as beingformed on the first surface 210 a of the master substrate 210, exampleembodiments are not limited thereto. For example, the photoresist 220may alternatively be formed on the stamp substrate 230.

The stamp substrate 230 may be pressed against the master substrate 210.At this point, the stamp substrate 230 faces the first surface 210 a ofthe master substrate 210 on which the photoresist 220 is formed. Thepattern of the master substrate 210 may be transferred to the stampsubstrate 230. The stamp substrate 230 may be formed of quartz, glass,or a polymer having a high hardness. The polymer having the highhardness may be acrylate group polymer, a urethane group polymer, or asilicon containing polymer.

Referring to FIG. 2C, the photoresist 220 may be hardened by irradiatingultraviolet rays UV onto the stamp substrate 230. As a result, thepattern of the master substrate 210 may be transferred to thephotoresist 220 using a nanoimprint process. The photoresist 220 onwhich the pattern is transferred may be referred to as a photoresistpattern 222. The photoresist pattern 222 may be formed of a materialhaving etch selectivity with respect to the stamp substrate 230. Thephotoresist pattern 222 may have an aspect ratio of greater than 2.

Referring to FIG. 2D, after detaching the master substrate 210 from thestamp substrate 230, the stamp substrate 230 may be etched using thephotoresist pattern 222 as an etch mask.

Referring to FIG. 2E, when the photoresist pattern 222 is removed, astamp 230′ having a pattern on a surface thereof is manufactured. Thepattern of the manufactured stamp 230′ is a reverse image of the patternof the master substrate 210.

FIGS. 3A through 3G are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments.

Referring to FIG. 3A, a master substrate 310 may be fabricated byforming a pattern on a substrate, for example, a silicon substrate. Themaster substrate 310 may be formed by a conventional method, forexample, electron-beam lithography, photo lithography, interferencelithography, or self assembly lithography. The pattern may be formed ona first surface 310 a of the master substrate 310.

Referring to FIG. 3B, a first photoresist 320 that can be hardened byultraviolet rays may be coated on the first surface 310 a of the mastersubstrate 310 using a spin coating method, a dispensing method, or adipping method. The first photoresist 320 may be formed of a materialhaving an etch selectivity with respect to a first stamp substrate 330.Although FIG. 3B illustrates the first photoresist 320 as being formedon the first surface 310 a of the master substrate 310, exampleembodiments are not limited thereto. For example, the first photoresist320 may be formed on the first stamp substrate 330.

The first stamp substrate 330 may be pressed against the mastersubstrate 310. At this point, the first stamp substrate 330 faces thefirst surface 310 a of the master substrate 310 on which the firstphotoresist 320 is formed. The pattern of the master substrate 310 maybe transferred to the first stamp substrate 330. The first stampsubstrate 330 may be formed of quartz, glass, or a polymer having a highhardness. The polymer having the high hardness may be acrylate grouppolymer, a urethane group polymer, or a silicon containing polymer.

Referring to FIG. 3C, the first photoresist 320 may be hardened byirradiating ultraviolet rays UV onto the first stamp substrate 330. As aresult, the pattern of the master substrate 310 may be transferred tothe first photoresist 320 using a nanoimprint process. The firstphotoresist 320 on which the pattern is transferred is referred to as afirst photoresist pattern 322.

Referring to FIG. 3D, after removing the master substrate 310 from thefirst stamp substrate, a release coating 324 is formed on the firstphotoresist pattern 322. The release coating 324 may be a fluorine resincoating, for example, polytetrafluoroethylene (PTFE).

A second stamp substrate 340 is prepared. The second stamp substrate 340may be formed of the same material as the first stamp substrate 330.

A second photoresist 350 that can be hardened by ultraviolet rays may becoated between the first stamp substrate 330 and the second stampsubstrate 340. For example, the second photoresist 350 may be formed onthe second stamp substrate 340 or the first photoresist pattern 322. Forexample, the second photoresist 350 may be formed on the release coating324.

The second stamp substrate 340 may be pressed against the first stampsubstrate 330.

Referring to FIG. 3E, the second photoresist 350 may be hardened byirradiating ultraviolet rays UV onto the first stamp substrate 330. Theultraviolet rays UV may be irradiated onto the second stamp substrate340. As a result, the first photoresist pattern 322 may be transferredto the second photoresist 350 using a nanoimprint process. The secondphotoresist 350 on which the pattern is transferred is referred to as asecond photoresist pattern 352.

Referring to FIG. 3F, after removing the first stamp substrate 330, thefirst photoresist pattern 322, and the release coating 324 from thesecond photoresist pattern 352, the second stamp substrate 340 may beetched using the second photoresist pattern 352 as an etch mask.

Referring to FIG. 3G, when the second photoresist pattern 352 isremoved, a second stamp 340′ having a pattern on a surface thereof ismanufactured. The pattern of the manufactured stamp 340′ has the sameshape as the pattern of the master substrate 310.

The release coating 324 is used to readily separate the firstphotoresist pattern 322 from the second photoresist pattern 352.However, example embodiments are not limited thereto. That is, the firstphotoresist 320 and the second photoresist 350 may be formed ofmaterials having release characteristics different from each otherinstead of using the release coating 324. For example, one of the firstphotoresist 320 and the second photoresist 350 may be formed of aphotoresist containing fluorine, for example, fluorine resin, and theother photoresist may be formed of a photoresist that includes littlefluorine.

FIGS. 4A through 4H are sequential cross-sectional views for explaininga method of manufacturing a nanoimprint stamp according to exampleembodiments.

Referring to FIG. 4A, a master substrate 410 is fabricated by forming apattern on a substrate, for example, a silicon substrate. The mastersubstrate 410 may be formed by a conventional method, for example,E-beam lithography, photo lithography, interference lithography, or selfassembly lithography. The pattern is formed on a first surface 410 a ofthe master substrate 410.

Referring to FIG. 4B, a first photoresist 420 that can be hardened byultraviolet rays is coated on the first surface 410 a of the mastersubstrate 410 using a spin coating method, a dispensing method, or adipping method. The first photoresist 420 may be formed of a materialhaving an etch selectivity with a first stamp substrate 430. AlthoughFIG. 4B illustrates the first photoresist 420 as being formed on thefirst surface 410 a of the master substrate 410, example embodiments arenot limited thereto. For example, the first photoresist 420 may beformed on the first stamp substrate 430.

The first stamp substrate 430 may be pressed against the mastersubstrate 410. At this point, the first stamp substrate 430 faces thefirst surface 410 a of the master substrate 410 on which the firstphotoresist 420 is formed. The pattern of the master substrate 410 maybe transferred to the first stamp substrate 430. The first stampsubstrate 430 may be formed of quartz, glass, or a polymer having a highhardness. The polymer having the high hardness may be acrylate grouppolymer, a urethane group polymer, or a silicon containing polymer.

Referring to FIG. 4C, the first photoresist 420 may be hardened byirradiating ultraviolet rays UV onto the first stamp substrate 430. As aresult, a reverse image of the pattern of the master substrate 410 istransferred to the first photoresist 420 using a nanoimprint process.The first photoresist 420 on which the pattern is transferred isreferred to as a first photoresist pattern 422.

Referring to FIG. 4D, an etch barrier layer 442 may be formed on asecond stamp substrate 440. The first photoresist pattern 422 may betransferred to the second stamp substrate 440. A nanoimprint process isperformed using the first stamp substrate 430. The second stampsubstrate 440 may be formed of quartz, glass, or a polymer having a highhardness like the first stamp substrate 430.

The etch barrier layer 442 may be a metal thin film deposited of ametal, for example, chrome Cr, titanium Ti, tantalum Ta, platinum Pt,gold Au, or molybdenum Mo (or an oxide or a nitride of these metals). Inexample embodiments, the etch barrier layer 442 may be formed to have athickness in a range from about 1 nm to about 20 nm by a conventionaldeposition method. The metal thin film may be formed to have anultraviolet (UV) transmissivity greater than 20%.

The etching barrier layer 442 may be formed of an oxide or a nitride,for example, chrome oxide, silicon oxide, ITO, or silicon nitride. Theetching barrier layer 442 formed of these oxides (or the siliconnitride) may have a thickness having an ultraviolet (UV) transmissivitygreater than 50%.

After removing the master substrate 410, a release coating 424 may becoated on the first photoresist pattern 422. The release coating 424 maybe a fluorine resin coating, for example, polytetrafluoroethylene(PTFE).

A second photoresist 450 that can be hardened by ultraviolet rays may becoated between the first stamp substrate 430 and the second stampsubstrate 440. In example embodiments, the second photoresist 450 may beformed on one of the first photoresist pattern 422 and the etch barrierlayer 442. For example, the second photoresist 450 may be formed on therelease layer 424.

The second stamp substrate 440 may be pressed against the first stampsubstrate 430.

Referring to FIG. 4E, the second photoresist 450 may be hardened byirradiating ultraviolet rays UV onto the first stamp substrate 430 orthe second stamp substrate 440. As a result, the pattern of the firststamp substrate 430 may be transferred to the second photoresist 450using a nanoimprint process. The second photoresist 450 on which thepattern is transferred is referred to as a second photoresist pattern452.

Referring to FIG. 4F, after removing the first stamp substrate 430, thefirst photoresist pattern 422, and the release coating 424, the etchbarrier layer 442 may be etched using the second photoresist pattern 452as an etch mask.

Referring to FIGS. 4G and 4H, the etched etch barrier layer 442 isreferred to as a hard mask 444. The second stamp substrate 440 is etchedusing the hard mask 444 by using a dry or wet etch method. When the hardmask 444 is removed, a second stamp 440′ having a pattern on a surfacethereof is manufactured. The second stamp 440′ has a pattern having thesame shape as that of the master substrate 410.

The release coating 424 may be used to readily separate the firstphotoresist pattern 422 from the second photoresist pattern 452.However, example embodiments are not limited thereto. That is, the firstphotoresist 420 and the second photoresist 450 may be formed ofmaterials having release characteristics different from each otherinstead of using the release coating 424. For example, one of the firstphotoresist 420 and the second photoresist 450 may be formed of aphotoresist containing fluorine, for example, fluorine resin, and theother photoresist may be formed of a photoresist that includes littlefluorine.

In the method of manufacturing a nanoimprint stamp according to exampleembodiments, after fabricating a master substrate on which anano-structure pattern is formed by using a semiconductor process, thenanoimprint stamp is manufactured using the master substrate in ananoimprint process. Therefore, a relatively precise nano-structurepattern can be formed on the nanoimprint stamp.

In the methods of manufacturing nanoimprint stamps according to exampleembodiments, after fabricating a master substrate on which anano-structure pattern is formed by using a semiconductor process, afirst stamp is manufactured using the master substrate in a nanoimprintprocess. Afterwards, a second stamp is manufactured using the firststamp in a nanoimprint process. Therefore, a precise nano-structurepattern may be formed on the second stamp which is a nanoimprint stamp.Also, a pattern identical to the pattern formed on the master substratecan be formed on the second stamp.

It should be understood that example embodiments described herein shouldbe considered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within exampleembodiments should typically be considered as available for othersimilar features or aspects in other embodiments.

What is claimed is:
 1. A method of manufacturing a nanoimprint stamp,the method comprising: forming a pattern on a surface of a mastersubstrate; depositing an etch barrier layer on a surface of a stampsubstrate; coating a photoresist on one of the surface of the mastersubstrate and the surface of the stamp substrate; pressing the mastersubstrate against the stamp substrate to compress the photoresist;forming a photoresist pattern on the stamp substrate by hardening thephotoresist; forming a hard mask on the stamp substrate by etching theetch barrier layer using the photoresist pattern; and etching the stampsubstrate using the hard mask as an etch mask, wherein the etch barrierlayer includes one of a first metal including at least one of Cr, Ti,Ta, Pt, Au, and Mo and a metal oxide or a metal nitride that is formedby combining oxygen or nitrogen with the first metal, and the etchbarrier layer is formed to have a thickness in a range from about 1 nmto about 20 nm.
 2. The method of claim 1, wherein the master substrateis a silicon substrate.
 3. The method of claim 1, wherein the stampsubstrate includes at least one of one of quartz, glass, and polymer. 4.The method of claim 1, wherein the photoresist is an ultraviolet rayhardening photoresist, and hardening the photoresist includesirradiating ultraviolet rays onto the stamp substrate.
 5. A method ofmanufacturing a nanoimprint stamp, the method comprising: forming apattern on a surface of a master substrate; depositing an etch barrierlayer on a surface of a stamp substrate; coating a photoresist on one ofthe surface of the master substrate and the surface of the stampsubstrate; pressing the master substrate against the stamp substrate tocompress the photoresist; forming a photoresist pattern on the stampsubstrate by hardening the photoresist; forming a hard mask on the stampsubstrate by etching the etch barrier layer using the photoresistpattern; and etching the stamp substrate using the hard mask as an etchmask, wherein the etch barrier layer includes one of SiO2, ITO, andSi3N4.
 6. The method of claim 5, wherein the master substrate is asilicon substrate.
 7. The method of claim 5, wherein the stamp substrateincludes at least one of one of quartz, glass, and polymer.
 8. Themethod of claim 5, wherein the photoresist is an ultraviolet rayhardening photoresist, and hardening the photoresist includesirradiating ultraviolet rays onto the stamp substrate.